US63942X1063 - Common Stock
NAVITAS SEMICONDUCTOR CORP
NASDAQ:NVTS (11/22/2024, 8:00:02 PM)
After market: 2.4105 -0.01 (-0.39%)2.42
+0.4 (+19.8%)
Navitas Semiconductor Corp. engages in the development of ultra-efficient gallium nitride (GaN) semiconductors. The company is headquartered in Torrance, California and currently employs 314 full-time employees. The company went IPO on 2020-12-03. The firm is engaged in designing, developing and marketing power semiconductors, including gallium nitride (GaN) power integrated circuits (ICs), silicon carbide (SiC) power devices, associated silicon system controllers and digital isolators used in power conversion and charging. Power supplies incorporating its products are used in a variety of electronics products, including fast chargers for mobile phones and laptops, consumer electronics, data centers, solar inverters and electric vehicles, among numerous other applications. Its GaNFast power ICs integrate GaN power and drive, with control, sensing, and protection to enable faster charging, higher power density and energy savings. Its GeneSiC power devices are optimized with reliable SiC solutions. The company also offers a range of SiC MOSFETs and diodes, which have lower resistance at higher temperatures, 25°C cooler and have three times longer device life expectancy.
NAVITAS SEMICONDUCTOR CORP
3520 Challenger St.
Torrance CALIFORNIA
P: 18446542642
CEO: Richard J. Hendrix
Employees: 314
Website: https://navitassemi.com/
AI Data Centers, EV, and Mobile markets being penetrated by disruptive, next-gen GaN and SiC power semis, displacing legacy silicon chips.
AI Data Centers, EV, and Mobile markets being penetrated by disruptive, next-gen GaN and SiC power semis, displacing legacy silicon chips....
TORRANCE, Calif., Nov. 14, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS) the only pure-play, next-generation power semiconductor...
Next-generation solution achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers
Next-generation solution achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers...
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